WND firm makes breakthrough in semiconductor sector

Goetsu Semiconductor Wuxi Co hosts a presentation ceremony for its latest gallium nitride material in Wuxi National Hi-tech District on Dec 15. [Photo/WeChat account: xinwu_wx]

Goetsu Semiconductor Wuxi Co hosted a presentation ceremony for its latest gallium nitride material in Wuxi National Hi-tech District on Dec 15.

The new product is the world's first over-one-centimeter-thick sample of GaN material. According to the company, GaN is used in semiconductors and the product is a remarkable technical breakthrough.

Goetsu Semiconductor also signed an A-round financing strategic framework agreement with Legend Capital and Wuxi New District Investment Group.

Founded in 2019, Wuxi Goetsu Semiconductor is the first project to be established in the Wuxi Lead Integrated Circuit Equipment Material Industrial Park. The company focuses on the development, production and sale of GaN self-supporting substrates.

In February 2020, Goetsu Semiconductor signed a cooperation agreement with Wuxi Lead Intelligent Equipment Co Ltd and the management committee of WND to launch an industrialization project to produce GaN self-supporting monocrystal substrates of two to six inches in the WND. The project's goal is to fill a gap in the field of third-generation compound semiconductor GaN raw materials in Wuxi, according to the company's manager.